Chemical solution deposition of CaCu3Ti4O 12 thin film

Viswanathan S. Saji; Han Cheol Choe

doi:10.1007/s12034-010-0031-y

Chemical solution deposition of CaCu₃Ti₄O ₁₂ thin film

Viswanathan S. Saji, Han Cheol Choe

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

CaCu₃Ti₄O₁₂ (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using impedance spectroscopy. Polycrystalline pure phase CCTO thin films with (220) preferential orientation was obtained at a sintering temperature of 750°C. There was a bimodal size distribution of grains. The dielectric constant and loss factor at 1 kHz obtained for a film sintered at 750°C was κ ∼ 2000 and tan δ ∼ 0.05.

Original language	English
Pages (from-to)	203-207
Number of pages	5
Journal	Bulletin of Materials Science
Volume	33
Issue number	3
DOIs	https://doi.org/10.1007/s12034-010-0031-y
State	Published - Jun 2010
Externally published	Yes

Keywords

CaCuTiO
Chemical solution deposition
Dielectric properties
Thin film

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials

Access to Document

10.1007/s12034-010-0031-y

Cite this

@article{77eaac8cfd0142f9998299932a427efb,

title = "Chemical solution deposition of CaCu3Ti4O 12 thin film",

abstract = "CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using impedance spectroscopy. Polycrystalline pure phase CCTO thin films with (220) preferential orientation was obtained at a sintering temperature of 750°C. There was a bimodal size distribution of grains. The dielectric constant and loss factor at 1 kHz obtained for a film sintered at 750°C was κ ∼ 2000 and tan δ ∼ 0.05.",

keywords = "CaCuTiO, Chemical solution deposition, Dielectric properties, Thin film",

author = "Saji, \{Viswanathan S.\} and Choe, \{Han Cheol\}",

year = "2010",

month = jun,

doi = "10.1007/s12034-010-0031-y",

language = "English",

volume = "33",

pages = "203--207",

journal = "Bulletin of Materials Science",

issn = "0250-4707",

publisher = "Indian Academy of Sciences",

number = "3",

}

TY - JOUR

T1 - Chemical solution deposition of CaCu3Ti4O 12 thin film

AU - Saji, Viswanathan S.

AU - Choe, Han Cheol

PY - 2010/6

Y1 - 2010/6

N2 - CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using impedance spectroscopy. Polycrystalline pure phase CCTO thin films with (220) preferential orientation was obtained at a sintering temperature of 750°C. There was a bimodal size distribution of grains. The dielectric constant and loss factor at 1 kHz obtained for a film sintered at 750°C was κ ∼ 2000 and tan δ ∼ 0.05.

AB - CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using impedance spectroscopy. Polycrystalline pure phase CCTO thin films with (220) preferential orientation was obtained at a sintering temperature of 750°C. There was a bimodal size distribution of grains. The dielectric constant and loss factor at 1 kHz obtained for a film sintered at 750°C was κ ∼ 2000 and tan δ ∼ 0.05.

KW - CaCuTiO

KW - Chemical solution deposition

KW - Dielectric properties

KW - Thin film

UR - https://www.scopus.com/pages/publications/77957551525

U2 - 10.1007/s12034-010-0031-y

DO - 10.1007/s12034-010-0031-y

M3 - Article

AN - SCOPUS:77957551525

SN - 0250-4707

VL - 33

SP - 203

EP - 207

JO - Bulletin of Materials Science

JF - Bulletin of Materials Science

IS - 3

ER -