Characterization of Eu doped ZnO micropods prepared by chemical bath deposition on p-Si substrate

NA Althumairi; I Baig; TS Kayed; Abdelkarim Mustafa Cherif Mekki; A Lusson; V Sallet; A Majid; A Fouzri

doi:10.1016/j.vacuum.2022.110874

Characterization of Eu doped ZnO micropods prepared by chemical bath deposition on p-Si substrate

NA Althumairi
, I Baig
, TS Kayed
, Abdelkarim Mustafa Cherif Mekki
, A Lusson
, V Sallet
, A Majid
, A Fouzri

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The chemical bath deposition method was used to synthesize Eu-doped ZnO on p-type (100) silicon. The SEM image shows the formation of micropod-like ZnO. EDX and XPS measurements showed an increase in the Eu concentration up to 2.54% and the simultaneous presence of Eu ³⁺ and Eu ²⁺. XRD analysis confirmed that the interstitial Eu ³⁺ ions distorted the four tetrahedral bonds, and the substitution of Eu ²⁺ ions increased the c lattice parameter. Only Eu ³⁺ ⁵D ₀→ ⁷F ₂ transition-related emission was observed, so a weak transfer energy from the ZnO matrix to the Eu ion occurred. However, the competition between the emission of deep-level defects in the host matrix and that of Eu ³⁺ ions deforms the visible emission towards the red color. The I–V measurements of the Eu-ZnO/p-Si heterojunctions showed diode-like behavior with a low rectification ratio and a barrier height around 0.84 eV not affected by the Eu concentration.

Original language	English
Article number	110874
Journal	Vacuum
Volume	198
DOIs	https://doi.org/10.1016/j.vacuum.2022.110874
State	Published - Apr 2022

Bibliographical note

Funding Information:
The authors take this opportunity to thank the Department of Physics, College of Science at Zulfi, Majmaah University, specifically Dr. Ibrahim Shaarany, for helpful technical assistance with equipment facilities.

Publisher Copyright:
© 2022 Elsevier Ltd

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10.1016/j.vacuum.2022.110874

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@article{9a4872dde5f44ccf8e66a35e031eaa89,

title = "Characterization of Eu doped ZnO micropods prepared by chemical bath deposition on p-Si substrate",

abstract = "The chemical bath deposition method was used to synthesize Eu-doped ZnO on p-type (100) silicon. The SEM image shows the formation of micropod-like ZnO. EDX and XPS measurements showed an increase in the Eu concentration up to 2.54\% and the simultaneous presence of Eu 3+ and Eu 2+. XRD analysis confirmed that the interstitial Eu 3+ ions distorted the four tetrahedral bonds, and the substitution of Eu 2+ ions increased the c lattice parameter. Only Eu 3+ 5D 0→ 7F 2 transition-related emission was observed, so a weak transfer energy from the ZnO matrix to the Eu ion occurred. However, the competition between the emission of deep-level defects in the host matrix and that of Eu 3+ ions deforms the visible emission towards the red color. The I–V measurements of the Eu-ZnO/p-Si heterojunctions showed diode-like behavior with a low rectification ratio and a barrier height around 0.84 eV not affected by the Eu concentration.",

author = "NA Althumairi and I Baig and TS Kayed and Mekki, \{Abdelkarim Mustafa Cherif\} and A Lusson and V Sallet and A Majid and A Fouzri",

note = "Funding Information: The authors take this opportunity to thank the Department of Physics, College of Science at Zulfi, Majmaah University, specifically Dr. Ibrahim Shaarany, for helpful technical assistance with equipment facilities. Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2022",

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doi = "10.1016/j.vacuum.2022.110874",

language = "English",

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T1 - Characterization of Eu doped ZnO micropods prepared by chemical bath deposition on p-Si substrate

AU - Althumairi, NA

AU - Baig, I

AU - Kayed, TS

AU - Mekki, Abdelkarim Mustafa Cherif

AU - Lusson, A

AU - Sallet, V

AU - Majid, A

AU - Fouzri, A

N1 - Funding Information: The authors take this opportunity to thank the Department of Physics, College of Science at Zulfi, Majmaah University, specifically Dr. Ibrahim Shaarany, for helpful technical assistance with equipment facilities. Publisher Copyright: © 2022 Elsevier Ltd

PY - 2022/4

Y1 - 2022/4

N2 - The chemical bath deposition method was used to synthesize Eu-doped ZnO on p-type (100) silicon. The SEM image shows the formation of micropod-like ZnO. EDX and XPS measurements showed an increase in the Eu concentration up to 2.54% and the simultaneous presence of Eu 3+ and Eu 2+. XRD analysis confirmed that the interstitial Eu 3+ ions distorted the four tetrahedral bonds, and the substitution of Eu 2+ ions increased the c lattice parameter. Only Eu 3+ 5D 0→ 7F 2 transition-related emission was observed, so a weak transfer energy from the ZnO matrix to the Eu ion occurred. However, the competition between the emission of deep-level defects in the host matrix and that of Eu 3+ ions deforms the visible emission towards the red color. The I–V measurements of the Eu-ZnO/p-Si heterojunctions showed diode-like behavior with a low rectification ratio and a barrier height around 0.84 eV not affected by the Eu concentration.

AB - The chemical bath deposition method was used to synthesize Eu-doped ZnO on p-type (100) silicon. The SEM image shows the formation of micropod-like ZnO. EDX and XPS measurements showed an increase in the Eu concentration up to 2.54% and the simultaneous presence of Eu 3+ and Eu 2+. XRD analysis confirmed that the interstitial Eu 3+ ions distorted the four tetrahedral bonds, and the substitution of Eu 2+ ions increased the c lattice parameter. Only Eu 3+ 5D 0→ 7F 2 transition-related emission was observed, so a weak transfer energy from the ZnO matrix to the Eu ion occurred. However, the competition between the emission of deep-level defects in the host matrix and that of Eu 3+ ions deforms the visible emission towards the red color. The I–V measurements of the Eu-ZnO/p-Si heterojunctions showed diode-like behavior with a low rectification ratio and a barrier height around 0.84 eV not affected by the Eu concentration.

UR - https://www.scopus.com/pages/publications/85122756630

U2 - 10.1016/j.vacuum.2022.110874

DO - 10.1016/j.vacuum.2022.110874

M3 - Article

SN - 0042-207X

VL - 198

JO - Vacuum

JF - Vacuum

M1 - 110874

ER -

Characterization of Eu doped ZnO micropods prepared by chemical bath deposition on p-Si substrate

Abstract

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