Abstract
This paper reports on an alternative nanolithographic technique for bulk micromachining of silicon. We show how to selectively etch Si(110) in aqueous KOH solutions using electron-beam-induced nanomasking. Already nanometre thin carbonaceous films can completely suppress the wet anisotropic chemical etching of Si performed in alkaline solution (10wt% KOH+5wt% isopropanol). It is shown that under optimized conditions, this approach can be exploited for the fabrication of three-dimensional micro-and nanostructures.
| Original language | English |
|---|---|
| Article number | 013 |
| Pages (from-to) | 5363-5366 |
| Number of pages | 4 |
| Journal | Nanotechnology |
| Volume | 17 |
| Issue number | 21 |
| DOIs | |
| State | Published - 14 Nov 2006 |
| Externally published | Yes |
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering
