Bulk micromachining of silicon using electron-beam-induced carbonaceous nanomasking

T. Djenizian; B. Salhi; R. Boukherroub; P. Schmuki

doi:10.1088/0957-4484/17/21/013

Bulk micromachining of silicon using electron-beam-induced carbonaceous nanomasking

T. Djenizian^*, B. Salhi, R. Boukherroub, P. Schmuki

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This paper reports on an alternative nanolithographic technique for bulk micromachining of silicon. We show how to selectively etch Si(110) in aqueous KOH solutions using electron-beam-induced nanomasking. Already nanometre thin carbonaceous films can completely suppress the wet anisotropic chemical etching of Si performed in alkaline solution (10wt% KOH+5wt% isopropanol). It is shown that under optimized conditions, this approach can be exploited for the fabrication of three-dimensional micro-and nanostructures.

Original language	English
Article number	013
Pages (from-to)	5363-5366
Number of pages	4
Journal	Nanotechnology
Volume	17
Issue number	21
DOIs	https://doi.org/10.1088/0957-4484/17/21/013
State	Published - 14 Nov 2006
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1088/0957-4484/17/21/013

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@article{24a5380621784f0d9a2f8a848a395f54,

title = "Bulk micromachining of silicon using electron-beam-induced carbonaceous nanomasking",

abstract = "This paper reports on an alternative nanolithographic technique for bulk micromachining of silicon. We show how to selectively etch Si(110) in aqueous KOH solutions using electron-beam-induced nanomasking. Already nanometre thin carbonaceous films can completely suppress the wet anisotropic chemical etching of Si performed in alkaline solution (10wt% KOH+5wt% isopropanol). It is shown that under optimized conditions, this approach can be exploited for the fabrication of three-dimensional micro-and nanostructures.",

author = "T. Djenizian and B. Salhi and R. Boukherroub and P. Schmuki",

year = "2006",

month = nov,

day = "14",

doi = "10.1088/0957-4484/17/21/013",

language = "English",

volume = "17",

pages = "5363--5366",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "21",

}

TY - JOUR

T1 - Bulk micromachining of silicon using electron-beam-induced carbonaceous nanomasking

AU - Djenizian, T.

AU - Salhi, B.

AU - Boukherroub, R.

AU - Schmuki, P.

PY - 2006/11/14

Y1 - 2006/11/14

N2 - This paper reports on an alternative nanolithographic technique for bulk micromachining of silicon. We show how to selectively etch Si(110) in aqueous KOH solutions using electron-beam-induced nanomasking. Already nanometre thin carbonaceous films can completely suppress the wet anisotropic chemical etching of Si performed in alkaline solution (10wt% KOH+5wt% isopropanol). It is shown that under optimized conditions, this approach can be exploited for the fabrication of three-dimensional micro-and nanostructures.

AB - This paper reports on an alternative nanolithographic technique for bulk micromachining of silicon. We show how to selectively etch Si(110) in aqueous KOH solutions using electron-beam-induced nanomasking. Already nanometre thin carbonaceous films can completely suppress the wet anisotropic chemical etching of Si performed in alkaline solution (10wt% KOH+5wt% isopropanol). It is shown that under optimized conditions, this approach can be exploited for the fabrication of three-dimensional micro-and nanostructures.

UR - http://www.scopus.com/inward/record.url?scp=33846096818&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/17/21/013

DO - 10.1088/0957-4484/17/21/013

M3 - Article

AN - SCOPUS:33846096818

SN - 0957-4484

VL - 17

SP - 5363

EP - 5366

JO - Nanotechnology

JF - Nanotechnology

IS - 21

M1 - 013

ER -

Bulk micromachining of silicon using electron-beam-induced carbonaceous nanomasking

Abstract

ASJC Scopus subject areas

UN SDGs

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