Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn

Q. Song; K. H. Chow; R. I. Miller; I. Fan; M. D. Hossain; R. F. Kiefl; S. R. Kreitzman; C. D.P. Levy; T. J. Parolin; M. R. Pearson; Z. Salman; H. Saadaoui; M. Smadella; D. Wang; K. M. Yu; X. Liu; J. K. Furdyna; W. A. MacFarlane

doi:10.1016/j.physb.2008.11.143

Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn

Q. Song^*, K. H. Chow, R. I. Miller, I. Fan, M. D. Hossain, R. F. Kiefl, S. R. Kreitzman, C. D.P. Levy, T. J. Parolin, M. R. Pearson, Z. Salman, H. Saadaoui, M. Smadella, D. Wang, K. M. Yu, X. Liu, J. K. Furdyna, W. A. MacFarlane

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A low energy beam of spin polarized ⁸Li⁺ has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed.

Original language	English
Pages (from-to)	892-895
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	404
Issue number	5-7
DOIs	https://doi.org/10.1016/j.physb.2008.11.143
State	Published - 15 Apr 2009
Externally published	Yes

Keywords

Dilute ferromagnetic semiconductor
GaAs:Mn
Low energy muon
Magnetism
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2008.11.143

Cite this

Song, Q., Chow, K. H., Miller, R. I., Fan, I., Hossain, M. D., Kiefl, R. F., Kreitzman, S. R., Levy, C. D. P., Parolin, T. J., Pearson, M. R., Salman, Z., Saadaoui, H., Smadella, M., Wang, D., Yu, K. M., Liu, X., Furdyna, J. K., & MacFarlane, W. A. (2009). Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn. Physica B: Condensed Matter, 404(5-7), 892-895. https://doi.org/10.1016/j.physb.2008.11.143

@article{c121645030aa4977b99f7a3030d23ddd,

title = "Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn",

abstract = "A low energy beam of spin polarized 8Li+ has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4\% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed.",

keywords = "Dilute ferromagnetic semiconductor, GaAs:Mn, Low energy muon, Magnetism, Thin films",

author = "Q. Song and Chow, \{K. H.\} and Miller, \{R. I.\} and I. Fan and Hossain, \{M. D.\} and Kiefl, \{R. F.\} and Kreitzman, \{S. R.\} and Levy, \{C. D.P.\} and Parolin, \{T. J.\} and Pearson, \{M. R.\} and Z. Salman and H. Saadaoui and M. Smadella and D. Wang and Yu, \{K. M.\} and X. Liu and Furdyna, \{J. K.\} and MacFarlane, \{W. A.\}",

year = "2009",

month = apr,

day = "15",

doi = "10.1016/j.physb.2008.11.143",

language = "English",

volume = "404",

pages = "892--895",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

number = "5-7",

}

Song, Q, Chow, KH, Miller, RI, Fan, I, Hossain, MD, Kiefl, RF, Kreitzman, SR, Levy, CDP, Parolin, TJ, Pearson, MR, Salman, Z, Saadaoui, H, Smadella, M, Wang, D, Yu, KM, Liu, X, Furdyna, JK & MacFarlane, WA 2009, 'Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn', Physica B: Condensed Matter, vol. 404, no. 5-7, pp. 892-895. https://doi.org/10.1016/j.physb.2008.11.143

TY - JOUR

T1 - Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn

AU - Song, Q.

AU - Chow, K. H.

AU - Miller, R. I.

AU - Fan, I.

AU - Hossain, M. D.

AU - Kiefl, R. F.

AU - Kreitzman, S. R.

AU - Levy, C. D.P.

AU - Parolin, T. J.

AU - Pearson, M. R.

AU - Salman, Z.

AU - Saadaoui, H.

AU - Smadella, M.

AU - Wang, D.

AU - Yu, K. M.

AU - Liu, X.

AU - Furdyna, J. K.

AU - MacFarlane, W. A.

PY - 2009/4/15

Y1 - 2009/4/15

N2 - A low energy beam of spin polarized 8Li+ has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed.

AB - A low energy beam of spin polarized 8Li+ has been employed to study the magnetic field distribution in an epitaxial thin film of 5.4% Mn doped GaAs(180 nm) on a (1 0 0) GaAs substrate via beta-detected NMR. The spectrum is a strong function of the implantation energy in the range 28-3 keV. In the magnetic layer, there is no indication of a missing fraction, and even more remarkable, there is a broad negatively shifted resonance. The spin lattice relaxation rate is, however, much faster in the Mn doped layer than in the substrate. A sharp peak characteristic of nonmagnetic GaAs is observed down to the lowest implantation energy, for which none of the Li should reach the substrate. This unexpected depth dependence is discussed.

KW - Dilute ferromagnetic semiconductor

KW - GaAs:Mn

KW - Low energy muon

KW - Magnetism

KW - Thin films

UR - https://www.scopus.com/pages/publications/62949229006

U2 - 10.1016/j.physb.2008.11.143

DO - 10.1016/j.physb.2008.11.143

M3 - Article

AN - SCOPUS:62949229006

SN - 0921-4526

VL - 404

SP - 892

EP - 895

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 5-7

ER -

Beta-detected NMR study of the local magnetic field in epitaxial GaAs:Mn

Abstract

Keywords

ASJC Scopus subject areas

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