Atomistic Field Theory for contact electrification of dielectrics

Khalid M. Abdelaziz, James Chen*, Tyler J. Hieber, Zayd C. Leseman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

The triboelectrification of conducting materials can be explained by electron transfer between different Fermi levels. However, triboelectrification in dielectrics is poorly understood. The surface dipole formations are shown to be caused by the contact-induced surface lattice deformations. An Atomistic Field Theory (AFT) based formulation is utilized to calculate the distribution of the polarization, electric and potential fields. The induced fields are considered as the driving force for charge transfer. The simulation results show that a MgO/BaTiO3 tribopair can generate up to 104 V/cm2, which is comprable with the data in the published literature.

Original languageEnglish
Pages (from-to)10-15
Number of pages6
JournalJournal of Electrostatics
Volume96
DOIs
StatePublished - Dec 2018
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2018 Elsevier B.V.

Keywords

  • Atomistic formulation
  • Lattice dynamics
  • Triboelectrification

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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