Asymmetrically-gated graphene self-switching diodes as negative differential resistance devices

Feras Al-Dirini*, Faruque M. Hossain, Ampalavanapillai Nirmalathas, Efstratios Skafidas

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

We present an asymmetrically-gated Graphene Self-Switching Diode (G-SSD) as a new negative differential resistance (NDR) device, and study its transport properties using nonequilibrium Green's function (NEGF) formalism and the Extended Huckel (EH) method. The device exhibits a new NDR mechanism, in which a very small quantum tunnelling current is used to control a much-larger channel conduction current, resulting in a very pronounced NDR effect. This NDR effect occurs at low bias voltages, below 1 V, and results in a very high current peak in the μA range and a high peak-to-valley current ratio (PVCR) of 40. The device has an atomically-thin structure with sub-10 nm dimensions, and does not require any doping or external gating. These results suggest that the device has promising potential in applications such as high frequency oscillators, memory devices, and fast switches.

Original languageEnglish
Pages (from-to)7628-7634
Number of pages7
JournalNanoscale
Volume6
Issue number13
DOIs
StatePublished - 7 Jul 2014
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science

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