Artificial-Neural-Network Optimized Triple-Active-Bridge Converter Minimizing Total Semiconductor Losses

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A data-driven modulation strategy for a triple-active-bridge (TAB) DC-DC converter is developed to directly minimize the total semiconductor losses, including both conduction and switching components, in wide-bandgap (WBG) SiC MOSFET-based systems. An offline exhaustive parameter sweep in PLECS, integrating detailed device-level SiC loss models and enforcing zero-voltage switching (ZVS) constraints, generates a high-fidelity dataset. The resulting dataset is further augmented and used to train a compact, artificial neural network (ANN) that predicts loss-optimal duty-cycles in real time, eliminating the need for large multidimensional lookup tables and computationally intensive online searches. Simulation results demonstrate consistent loss reductions of up to 23% compared to conventional phase-shift modulation across a wide operating envelope spanning 200-1000V and 2-10kW. The trained ANN requires only 870 bytes of memory and achieves mean absolute prediction error below 0.8%, enabling practical, high-efficiency control of multiport converters with minimal computational overhead and facilitating scalable implementation in embedded real-time power electronic controllers.

Original languageEnglish
Title of host publicationIECON 2025 - 51st Annual Conference of the IEEE Industrial Electronics Society
PublisherIEEE Computer Society
ISBN (Electronic)9798331596811
DOIs
StatePublished - 2025
Event51st Annual Conference of the IEEE Industrial Electronics Society, IECON 2025 - Madrid, Spain
Duration: 14 Oct 202517 Oct 2025

Publication series

NameIECON Proceedings (Industrial Electronics Conference)
ISSN (Print)2162-4704
ISSN (Electronic)2577-1647

Conference

Conference51st Annual Conference of the IEEE Industrial Electronics Society, IECON 2025
Country/TerritorySpain
CityMadrid
Period14/10/2517/10/25

Bibliographical note

Publisher Copyright:
© 2025 IEEE.

Keywords

  • SiC MOS-FET
  • Triple-active-bridge converter
  • artificial neural network
  • conduction loss
  • modulation optimization
  • semiconductor loss
  • switching loss

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Artificial-Neural-Network Optimized Triple-Active-Bridge Converter Minimizing Total Semiconductor Losses'. Together they form a unique fingerprint.

Cite this