Abstract
One of the main issues with the switched-capacitors based boost inverter topologies has been the higher losses in the components (switches and/or diode) in the charging loop. In this paper, an attempt has been made to reduce the losses in the components in the charging loop by using Gallium Nitride (GaN) devices in the charging loop. A five-level topology has been adopted to show the improvement in the power loss and junction temperatures. A detailed power loss analysis for all IGBT and hybrid GaN-IGBT combinations has been presented in this paper. Simulation results have been provided for both configurations using PLECS software.
| Original language | English |
|---|---|
| Title of host publication | 2024 IEEE 15th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2024 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9798350361001 |
| DOIs | |
| State | Published - 2024 |
Publication series
| Name | 2024 IEEE 15th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2024 |
|---|
Bibliographical note
Publisher Copyright:© 2024 IEEE.
Keywords
- boost inverter
- GaN device
- Multilevel inverter
- power loss
- Si device
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
- Mechanical Engineering
- Control and Optimization
- Computer Networks and Communications
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