Anomalous optical behavior in pyramid-like indium oxide (In2O3) nanostructures

F. Saeed, A. Farooq, A. Ali, S. Mehmood, C. Cepek, S. Bhardwaj, Anwar Ul-Hamid, A. S. Bhatti*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We present the VLS synthesis and photoluminescence characteristics of In2 O3 nanopyramids at different growth temperatures in oxygen deficient environment. TEM images showed preferential growth of [2 2 2] planes. XPS results confirmed oxygen vacancies and metallic indium, which affected the Raman modes and reduced the correlation length. The PL spectrum consisted a very strong band in visible region was resolved in two sub-bands centered at 622 nm and 668 nm corresponding to oxygen vacancies and indium interstitials, respectively. Temperature dependent PL behavior was normal in nanostructures grown at 875 °C and 760 °C, with activation energies of 6.60 meV and 5.02 meV, 6.69 meV and 4.26 meV for the two bands, respectively. A Berthelot-like PL response was observed in nanostructures grown at 830 °C, with escape energy of 4.12 meV and 0.53 meV and activation energy of 2.09 meV and 5.33 meV for the two bands, respectively.

Original languageEnglish
Article number114781
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume262
DOIs
StatePublished - Dec 2020

Bibliographical note

Publisher Copyright:
© 2020 Elsevier B.V.

Keywords

  • Carrier relaxation
  • InO nanostructures
  • Oxygen defects
  • Photoluminescence spectroscopy
  • Raman spectroscopy
  • VLS

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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