Abstract
We present the VLS synthesis and photoluminescence characteristics of In2 O3 nanopyramids at different growth temperatures in oxygen deficient environment. TEM images showed preferential growth of [2 2 2] planes. XPS results confirmed oxygen vacancies and metallic indium, which affected the Raman modes and reduced the correlation length. The PL spectrum consisted a very strong band in visible region was resolved in two sub-bands centered at 622 nm and 668 nm corresponding to oxygen vacancies and indium interstitials, respectively. Temperature dependent PL behavior was normal in nanostructures grown at 875 °C and 760 °C, with activation energies of 6.60 meV and 5.02 meV, 6.69 meV and 4.26 meV for the two bands, respectively. A Berthelot-like PL response was observed in nanostructures grown at 830 °C, with escape energy of 4.12 meV and 0.53 meV and activation energy of 2.09 meV and 5.33 meV for the two bands, respectively.
| Original language | English |
|---|---|
| Article number | 114781 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 262 |
| DOIs | |
| State | Published - Dec 2020 |
Bibliographical note
Publisher Copyright:© 2020 Elsevier B.V.
Keywords
- Carrier relaxation
- InO nanostructures
- Oxygen defects
- Photoluminescence spectroscopy
- Raman spectroscopy
- VLS
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering