Analysis of PV cell parameters of solution processed Cu-doped nickel oxide hole transporting layer-based organic-inorganic perovskite solar cells

The performance of an organic-inorganic perovskite solar cell (PSC) can be enriched via sinking the losses arisen in it. These losses are signified by the photovoltaic (PV) cell parameters (photogenerated current density (J_ph), shunt resistance (R_sh), series resistance (R_s), diode ideality factor (n), and reverse saturation current density (J₀)). In this paper, the dependency of the PV cell parameters of the Cu-doped nickel oxide (NiO:Cu)-based PSCs was investigated as a function of the Cu-doping (R_Cu/Ni) and the annealing temperature (t_an). The maximum value of J_ph was obtained for R_Cu/Ni = 5% and t_an = 400 °C. Moreover, the R_sh value enhanced by increasing R_Cu/Ni and t_an, while the R_s was decreased with the increase of the annealing temperature with the minimal value attained at R_Cu/Ni and t_an of 5% and 400 °C, respectively. Both n and J₀ increased with the rise in R_Cu/Ni and t_an. Electrical measurements showed that PSC fabricated using 5% NiO:Cu-HTL annealed at 400 °C exhibits the highest PV performance with a short-circuit current density (J_sc) of 21.24 mA/cm², an open-circuit voltage (V_oc) of 1.031 V, a fill factor (FF) of 72.50% and a power conversion efficiency (η) of 15.88%. The corresponding values of J_ph, R_sh, R_s, n and J₀ are 21.31 mA/cm², 1042.69 Ω.cm², 3.265 Ω.cm², 1.9739 and 3.025 × 10⁻¹¹ A/cm², respectively. These encouraging results provide the possibility to further optimize the optical and electrical properties of NiO:Cu-HTLs and pave the way for the development of more stable and highly-efficient PSCs.