Analysis of CMOS compatible Cu-based TM-pass optical polarizer

Tien Khee Ng; Mohammed Zahed Mustafa Khan; Ahmad Al-Jabr; Boon S. Ooi

doi:10.1109/LPT.2012.2187329

Analysis of CMOS compatible Cu-based TM-pass optical polarizer

Tien Khee Ng^*
, Mohammed Zahed Mustafa Khan
, Ahmad Al-Jabr
, Boon S. Ooi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

A transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-oxide-semiconductor technology platform is proposed and analyzed using the 2-D method-of-lines numerical model. In designing the optimum configuration for the polarizer, it was found that the metal-insulator-metal (MIM) polarizer structure is superior compared to the insulator-metal-insulator polarizer structure due to its higher polarization extinction ratio (PER) and low insertion loss. An optimized MIM TM-pass polarizer exhibits simulated long wavelength pass filter characteristics of > ∼1.2 μm, with fundamental TM ₀ and TE ₀ mode transmissivity of >70% and <5%, respectively, and with PER ∼11.5 dB in the wavelength range of 1.2-1.6 μm. The subwavelength and submicrometer features of this TM-polarizer are potentially suitable for compact and low power photonics integrated circuit implementation on silicon-based substrates.

Original language	English
Article number	6151033
Pages (from-to)	724-726
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	9
DOIs	https://doi.org/10.1109/LPT.2012.2187329
State	Published - 2012
Externally published	Yes

Bibliographical note

Funding Information:
Manuscript received Oct 29, 2011; revised January 31, 2012; accepted February 2, 2012. Date of publication February 10, 2012; date of current version April 4, 2012. This work was supported in part by KAUST - University of Michigan Academic Excellence Alliance Grant 2010.

Keywords

Complementary metal-oxide-semiconductor compatible
integrated photonics
numerical method
optical polarizer
silicon photonics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2012.2187329

Cite this

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title = "Analysis of CMOS compatible Cu-based TM-pass optical polarizer",

abstract = "A transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-oxide-semiconductor technology platform is proposed and analyzed using the 2-D method-of-lines numerical model. In designing the optimum configuration for the polarizer, it was found that the metal-insulator-metal (MIM) polarizer structure is superior compared to the insulator-metal-insulator polarizer structure due to its higher polarization extinction ratio (PER) and low insertion loss. An optimized MIM TM-pass polarizer exhibits simulated long wavelength pass filter characteristics of > ∼1.2 μm, with fundamental TM 0 and TE 0 mode transmissivity of >70\% and <5\%, respectively, and with PER ∼11.5 dB in the wavelength range of 1.2-1.6 μm. The subwavelength and submicrometer features of this TM-polarizer are potentially suitable for compact and low power photonics integrated circuit implementation on silicon-based substrates.",

keywords = "Complementary metal-oxide-semiconductor compatible, integrated photonics, numerical method, optical polarizer, silicon photonics",

author = "Ng, \{Tien Khee\} and Khan, \{Mohammed Zahed Mustafa\} and Ahmad Al-Jabr and Ooi, \{Boon S.\}",

note = "Funding Information: Manuscript received Oct 29, 2011; revised January 31, 2012; accepted February 2, 2012. Date of publication February 10, 2012; date of current version April 4, 2012. This work was supported in part by KAUST - University of Michigan Academic Excellence Alliance Grant 2010.",

year = "2012",

doi = "10.1109/LPT.2012.2187329",

language = "English",

volume = "24",

pages = "724--726",

journal = "IEEE Photonics Technology Letters",

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T1 - Analysis of CMOS compatible Cu-based TM-pass optical polarizer

AU - Ng, Tien Khee

AU - Khan, Mohammed Zahed Mustafa

AU - Al-Jabr, Ahmad

AU - Ooi, Boon S.

N1 - Funding Information: Manuscript received Oct 29, 2011; revised January 31, 2012; accepted February 2, 2012. Date of publication February 10, 2012; date of current version April 4, 2012. This work was supported in part by KAUST - University of Michigan Academic Excellence Alliance Grant 2010.

PY - 2012

Y1 - 2012

N2 - A transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-oxide-semiconductor technology platform is proposed and analyzed using the 2-D method-of-lines numerical model. In designing the optimum configuration for the polarizer, it was found that the metal-insulator-metal (MIM) polarizer structure is superior compared to the insulator-metal-insulator polarizer structure due to its higher polarization extinction ratio (PER) and low insertion loss. An optimized MIM TM-pass polarizer exhibits simulated long wavelength pass filter characteristics of > ∼1.2 μm, with fundamental TM 0 and TE 0 mode transmissivity of >70% and <5%, respectively, and with PER ∼11.5 dB in the wavelength range of 1.2-1.6 μm. The subwavelength and submicrometer features of this TM-polarizer are potentially suitable for compact and low power photonics integrated circuit implementation on silicon-based substrates.

AB - A transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-oxide-semiconductor technology platform is proposed and analyzed using the 2-D method-of-lines numerical model. In designing the optimum configuration for the polarizer, it was found that the metal-insulator-metal (MIM) polarizer structure is superior compared to the insulator-metal-insulator polarizer structure due to its higher polarization extinction ratio (PER) and low insertion loss. An optimized MIM TM-pass polarizer exhibits simulated long wavelength pass filter characteristics of > ∼1.2 μm, with fundamental TM 0 and TE 0 mode transmissivity of >70% and <5%, respectively, and with PER ∼11.5 dB in the wavelength range of 1.2-1.6 μm. The subwavelength and submicrometer features of this TM-polarizer are potentially suitable for compact and low power photonics integrated circuit implementation on silicon-based substrates.

KW - Complementary metal-oxide-semiconductor compatible

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KW - numerical method

KW - optical polarizer

KW - silicon photonics

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ER -

Analysis of CMOS compatible Cu-based TM-pass optical polarizer

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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