An Improved Degradation Monitoring Method for High Power IGBT Modules Based on On-State Resistance Estimation

Fu Dongqiang; Prasanth Sundararajan; Marif Daula Siddique; Sanjib Kumar Panda

doi:10.1109/IECON51785.2023.10312437

An Improved Degradation Monitoring Method for High Power IGBT Modules Based on On-State Resistance Estimation

Fu Dongqiang
, Prasanth Sundararajan
, Marif Daula Siddique
, Sanjib Kumar Panda

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Degradation of high-power IGBT modules adversely influences the safety of inverters and can cause significant economic loss in industrial applications. Due to various factors affecting the degradation of IGBTs, lots of advanced monitoring methods still struggle to comprehensively evaluate the current health status of IGBT modules during power converter operation. Therefore, this paper proposed an improved online degradation method for high-power IGBT modules based on the estimation of on-state resistance. This method has reduced component numbers and circuit complexity with higher monitoring accuracy and wider applications. The proposed condition monitoring methodology is verified experimentally on a three-phase inverter setup and the test results are presented.

Original language	English
Title of host publication	IECON 2023 - 49th Annual Conference of the IEEE Industrial Electronics Society
Publisher	IEEE Computer Society
ISBN (Electronic)	9798350331820
DOIs	https://doi.org/10.1109/IECON51785.2023.10312437
State	Published - 2023
Event	49th Annual Conference of the IEEE Industrial Electronics Society, IECON 2023 - Singapore, Singapore Duration: 16 Oct 2023 → 19 Oct 2023

Publication series

Name	IECON Proceedings (Industrial Electronics Conference)
ISSN (Print)	2162-4704
ISSN (Electronic)	2577-1647

Conference

Conference	49th Annual Conference of the IEEE Industrial Electronics Society, IECON 2023
Country/Territory	Singapore
City	Singapore
Period	16/10/23 → 19/10/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

condition monitoring
converter-level
degradation
on-state resistance
power IGBT modules

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/IECON51785.2023.10312437

Cite this

Dongqiang, F., Sundararajan, P., Siddique, M. D., & Panda, S. K. (2023). An Improved Degradation Monitoring Method for High Power IGBT Modules Based on On-State Resistance Estimation. In IECON 2023 - 49th Annual Conference of the IEEE Industrial Electronics Society (IECON Proceedings (Industrial Electronics Conference)). IEEE Computer Society. https://doi.org/10.1109/IECON51785.2023.10312437

@inproceedings{e25e6930b25843099c96e5c038b93503,

title = "An Improved Degradation Monitoring Method for High Power IGBT Modules Based on On-State Resistance Estimation",

abstract = "Degradation of high-power IGBT modules adversely influences the safety of inverters and can cause significant economic loss in industrial applications. Due to various factors affecting the degradation of IGBTs, lots of advanced monitoring methods still struggle to comprehensively evaluate the current health status of IGBT modules during power converter operation. Therefore, this paper proposed an improved online degradation method for high-power IGBT modules based on the estimation of on-state resistance. This method has reduced component numbers and circuit complexity with higher monitoring accuracy and wider applications. The proposed condition monitoring methodology is verified experimentally on a three-phase inverter setup and the test results are presented.",

keywords = "condition monitoring, converter-level, degradation, on-state resistance, power IGBT modules",

author = "Fu Dongqiang and Prasanth Sundararajan and Siddique, \{Marif Daula\} and Panda, \{Sanjib Kumar\}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 49th Annual Conference of the IEEE Industrial Electronics Society, IECON 2023 ; Conference date: 16-10-2023 Through 19-10-2023",

year = "2023",

doi = "10.1109/IECON51785.2023.10312437",

language = "English",

series = "IECON Proceedings (Industrial Electronics Conference)",

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booktitle = "IECON 2023 - 49th Annual Conference of the IEEE Industrial Electronics Society",

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Dongqiang, F, Sundararajan, P, Siddique, MD & Panda, SK 2023, An Improved Degradation Monitoring Method for High Power IGBT Modules Based on On-State Resistance Estimation. in IECON 2023 - 49th Annual Conference of the IEEE Industrial Electronics Society. IECON Proceedings (Industrial Electronics Conference), IEEE Computer Society, 49th Annual Conference of the IEEE Industrial Electronics Society, IECON 2023, Singapore, Singapore, 16/10/23. https://doi.org/10.1109/IECON51785.2023.10312437

An Improved Degradation Monitoring Method for High Power IGBT Modules Based on On-State Resistance Estimation. / Dongqiang, Fu; Sundararajan, Prasanth; Siddique, Marif Daula et al.
IECON 2023 - 49th Annual Conference of the IEEE Industrial Electronics Society. IEEE Computer Society, 2023. (IECON Proceedings (Industrial Electronics Conference)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - An Improved Degradation Monitoring Method for High Power IGBT Modules Based on On-State Resistance Estimation

AU - Dongqiang, Fu

AU - Sundararajan, Prasanth

AU - Siddique, Marif Daula

AU - Panda, Sanjib Kumar

PY - 2023

Y1 - 2023

N2 - Degradation of high-power IGBT modules adversely influences the safety of inverters and can cause significant economic loss in industrial applications. Due to various factors affecting the degradation of IGBTs, lots of advanced monitoring methods still struggle to comprehensively evaluate the current health status of IGBT modules during power converter operation. Therefore, this paper proposed an improved online degradation method for high-power IGBT modules based on the estimation of on-state resistance. This method has reduced component numbers and circuit complexity with higher monitoring accuracy and wider applications. The proposed condition monitoring methodology is verified experimentally on a three-phase inverter setup and the test results are presented.

AB - Degradation of high-power IGBT modules adversely influences the safety of inverters and can cause significant economic loss in industrial applications. Due to various factors affecting the degradation of IGBTs, lots of advanced monitoring methods still struggle to comprehensively evaluate the current health status of IGBT modules during power converter operation. Therefore, this paper proposed an improved online degradation method for high-power IGBT modules based on the estimation of on-state resistance. This method has reduced component numbers and circuit complexity with higher monitoring accuracy and wider applications. The proposed condition monitoring methodology is verified experimentally on a three-phase inverter setup and the test results are presented.

KW - condition monitoring

KW - converter-level

KW - degradation

KW - on-state resistance

KW - power IGBT modules

UR - https://www.scopus.com/pages/publications/85179523403

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DO - 10.1109/IECON51785.2023.10312437

M3 - Conference contribution

AN - SCOPUS:85179523403

T3 - IECON Proceedings (Industrial Electronics Conference)

BT - IECON 2023 - 49th Annual Conference of the IEEE Industrial Electronics Society

PB - IEEE Computer Society

T2 - 49th Annual Conference of the IEEE Industrial Electronics Society, IECON 2023

Y2 - 16 October 2023 through 19 October 2023

ER -

An Improved Degradation Monitoring Method for High Power IGBT Modules Based on On-State Resistance Estimation

Abstract

Publication series

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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Cite this