An improved analysis for the nonlinear distortion of analog MOSFET circuits with signals simultaneously applied to body, gate and drain terminals

M. T. Abuelma'atti

doi:10.1016/s0026-2692(97)00013-x

An improved analysis for the nonlinear distortion of analog MOSFET circuits with signals simultaneously applied to body, gate and drain terminals

M. T. Abuelma'atti^*

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper discusses the nonlinear distortion of MOSFET resistors with signals simultaneously applied to the drain, body and gate terminals. The special case of a single-frequency sinusoidal signal is discussed in detail and the necessary biasing and signal amplitude combinations for minimizing the second and third-harmonic distortions are investigated.

Original language	English
Pages (from-to)	951-960
Number of pages	10
Journal	Microelectronics Journal
Volume	29
Issue number	12
DOIs	https://doi.org/10.1016/s0026-2692(97)00013-x
State	Published - Dec 1998

Keywords

MOSFET resistors
Nonlinear distortion

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/s0026-2692(97)00013-x

Cite this

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title = "An improved analysis for the nonlinear distortion of analog MOSFET circuits with signals simultaneously applied to body, gate and drain terminals",

abstract = "This paper discusses the nonlinear distortion of MOSFET resistors with signals simultaneously applied to the drain, body and gate terminals. The special case of a single-frequency sinusoidal signal is discussed in detail and the necessary biasing and signal amplitude combinations for minimizing the second and third-harmonic distortions are investigated.",

keywords = "MOSFET resistors, Nonlinear distortion",

author = "Abuelma'atti, \{M. T.\}",

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doi = "10.1016/s0026-2692(97)00013-x",

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T1 - An improved analysis for the nonlinear distortion of analog MOSFET circuits with signals simultaneously applied to body, gate and drain terminals

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N2 - This paper discusses the nonlinear distortion of MOSFET resistors with signals simultaneously applied to the drain, body and gate terminals. The special case of a single-frequency sinusoidal signal is discussed in detail and the necessary biasing and signal amplitude combinations for minimizing the second and third-harmonic distortions are investigated.

AB - This paper discusses the nonlinear distortion of MOSFET resistors with signals simultaneously applied to the drain, body and gate terminals. The special case of a single-frequency sinusoidal signal is discussed in detail and the necessary biasing and signal amplitude combinations for minimizing the second and third-harmonic distortions are investigated.

KW - MOSFET resistors

KW - Nonlinear distortion

UR - https://www.scopus.com/pages/publications/0032301069

U2 - 10.1016/s0026-2692(97)00013-x

DO - 10.1016/s0026-2692(97)00013-x

M3 - Article

AN - SCOPUS:0032301069

SN - 0026-2692

VL - 29

SP - 951

EP - 960

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 12

ER -

An improved analysis for the nonlinear distortion of analog MOSFET circuits with signals simultaneously applied to body, gate and drain terminals

Abstract

Keywords

ASJC Scopus subject areas

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