An improved analysis for the bipolar linear transconductor

Muhammad Taher Abuelma'Atti; Hassan Muhammad Al-Daghrier

doi:10.1080/002072196137011

An improved analysis for the bipolar linear transconductor

Muhammad Taher Abuelma'Atti^*, Hassan Muhammad Al-Daghrier

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

Abstract

An improved analysis for the bipolar linear transconductor, assuming a finite value for the transistor current-gain β, is presented. A new expression for the normalized input-voltage as a function of the normalized output-current is obtained. A Fourier-series model is presented for this current-voltage relationship. Closed-form expressions are also derived for the harmonic and intermodulation components resulting from exciting the bipolar linear transconductor by a multisinusoidal input voltage. These expressions can be used to predict the limiting values of the input voltage amplitudes for a prescribed tolerable distortion percentage.

Original language	English
Pages (from-to)	739-746
Number of pages	8
Journal	International Journal of Electronics
Volume	80
Issue number	6
DOIs	https://doi.org/10.1080/002072196137011
State	Published - 1 Jun 1996

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1080/002072196137011

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title = "An improved analysis for the bipolar linear transconductor",

abstract = "An improved analysis for the bipolar linear transconductor, assuming a finite value for the transistor current-gain β, is presented. A new expression for the normalized input-voltage as a function of the normalized output-current is obtained. A Fourier-series model is presented for this current-voltage relationship. Closed-form expressions are also derived for the harmonic and intermodulation components resulting from exciting the bipolar linear transconductor by a multisinusoidal input voltage. These expressions can be used to predict the limiting values of the input voltage amplitudes for a prescribed tolerable distortion percentage.",

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AU - Al-Daghrier, Hassan Muhammad

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N2 - An improved analysis for the bipolar linear transconductor, assuming a finite value for the transistor current-gain β, is presented. A new expression for the normalized input-voltage as a function of the normalized output-current is obtained. A Fourier-series model is presented for this current-voltage relationship. Closed-form expressions are also derived for the harmonic and intermodulation components resulting from exciting the bipolar linear transconductor by a multisinusoidal input voltage. These expressions can be used to predict the limiting values of the input voltage amplitudes for a prescribed tolerable distortion percentage.

AB - An improved analysis for the bipolar linear transconductor, assuming a finite value for the transistor current-gain β, is presented. A new expression for the normalized input-voltage as a function of the normalized output-current is obtained. A Fourier-series model is presented for this current-voltage relationship. Closed-form expressions are also derived for the harmonic and intermodulation components resulting from exciting the bipolar linear transconductor by a multisinusoidal input voltage. These expressions can be used to predict the limiting values of the input voltage amplitudes for a prescribed tolerable distortion percentage.

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U2 - 10.1080/002072196137011

DO - 10.1080/002072196137011

M3 - Article

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SP - 739

EP - 746

JO - International Journal of Electronics

JF - International Journal of Electronics

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ER -

An improved analysis for the bipolar linear transconductor

Abstract

ASJC Scopus subject areas

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