An electron spin resonance study of reactively evaporated silicon oxide

P. A. Timson; C. A. Hogarth

doi:10.1016/0040-6090(71)90016-2

An electron spin resonance study of reactively evaporated silicon oxide

P. A. Timson^*, C. A. Hogarth

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

An e.s.r. signal in reactively evaporated silicon oxide films at g=2.00 was measured as a function of R p where R is the evaporation rate and p is the pressure. Values for spin density between 10¹⁸ and 10²⁰ cm^-3 were recorded. The signal is thought to be that of an unpaired silicon electron which acts as a centre for Poole-Frenkel emission during d.c. conduction. Oxidation of the unsaturated bond is only slightly sensitive to substrate temperature, indicating a low activation energy for oxidation. Atmospheric storage oxidized the bonds and the effects on spin density have been measured for various R p values. The results are compared with previously reported results on the electrical properties of silicon oxide and certain conclusions about conduction properties have been made.

Original language	English
Pages (from-to)	237-243
Number of pages	7
Journal	Thin Solid Films
Volume	8
Issue number	4
DOIs	https://doi.org/10.1016/0040-6090(71)90016-2
State	Published - Oct 1971
Externally published	Yes

Bibliographical note

Funding Information:
The authors would like to thank Dr. K. Lott of Brunel University Chemistry Dept. for his invaluable assistanced uring e.s.r. measurements.O ne of us (P.A.T.) gratefully acknowledges the Science Research Council for the studentship held during the period of this work.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(71)90016-2

Cite this

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title = "An electron spin resonance study of reactively evaporated silicon oxide",

abstract = "An e.s.r. signal in reactively evaporated silicon oxide films at g=2.00 was measured as a function of R p where R is the evaporation rate and p is the pressure. Values for spin density between 1018 and 1020 cm-3 were recorded. The signal is thought to be that of an unpaired silicon electron which acts as a centre for Poole-Frenkel emission during d.c. conduction. Oxidation of the unsaturated bond is only slightly sensitive to substrate temperature, indicating a low activation energy for oxidation. Atmospheric storage oxidized the bonds and the effects on spin density have been measured for various R p values. The results are compared with previously reported results on the electrical properties of silicon oxide and certain conclusions about conduction properties have been made.",

author = "Timson, \{P. A.\} and Hogarth, \{C. A.\}",

note = "Funding Information: The authors would like to thank Dr. K. Lott of Brunel University Chemistry Dept. for his invaluable assistanced uring e.s.r. measurements.O ne of us (P.A.T.) gratefully acknowledges the Science Research Council for the studentship held during the period of this work.",

year = "1971",

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doi = "10.1016/0040-6090(71)90016-2",

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T1 - An electron spin resonance study of reactively evaporated silicon oxide

AU - Timson, P. A.

AU - Hogarth, C. A.

N1 - Funding Information: The authors would like to thank Dr. K. Lott of Brunel University Chemistry Dept. for his invaluable assistanced uring e.s.r. measurements.O ne of us (P.A.T.) gratefully acknowledges the Science Research Council for the studentship held during the period of this work.

PY - 1971/10

Y1 - 1971/10

N2 - An e.s.r. signal in reactively evaporated silicon oxide films at g=2.00 was measured as a function of R p where R is the evaporation rate and p is the pressure. Values for spin density between 1018 and 1020 cm-3 were recorded. The signal is thought to be that of an unpaired silicon electron which acts as a centre for Poole-Frenkel emission during d.c. conduction. Oxidation of the unsaturated bond is only slightly sensitive to substrate temperature, indicating a low activation energy for oxidation. Atmospheric storage oxidized the bonds and the effects on spin density have been measured for various R p values. The results are compared with previously reported results on the electrical properties of silicon oxide and certain conclusions about conduction properties have been made.

AB - An e.s.r. signal in reactively evaporated silicon oxide films at g=2.00 was measured as a function of R p where R is the evaporation rate and p is the pressure. Values for spin density between 1018 and 1020 cm-3 were recorded. The signal is thought to be that of an unpaired silicon electron which acts as a centre for Poole-Frenkel emission during d.c. conduction. Oxidation of the unsaturated bond is only slightly sensitive to substrate temperature, indicating a low activation energy for oxidation. Atmospheric storage oxidized the bonds and the effects on spin density have been measured for various R p values. The results are compared with previously reported results on the electrical properties of silicon oxide and certain conclusions about conduction properties have been made.

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U2 - 10.1016/0040-6090(71)90016-2

DO - 10.1016/0040-6090(71)90016-2

M3 - Article

AN - SCOPUS:0042786327

SN - 0040-6090

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EP - 243

JO - Thin Solid Films

JF - Thin Solid Films

IS - 4

ER -

An electron spin resonance study of reactively evaporated silicon oxide

Abstract

Bibliographical note

ASJC Scopus subject areas

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