Ambipolar operation of hybrid SiC-carbon nanotube based thin film transistors for logic circuits applications

B. Aïssa; M. Nedil; A. H. Esam; N. Tabet; D. Therriault; F. Rosei

doi:10.1063/1.4739939

Ambipolar operation of hybrid SiC-carbon nanotube based thin film transistors for logic circuits applications

B. Aïssa^*, M. Nedil, A. H. Esam, N. Tabet, D. Therriault, F. Rosei

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report on the ambipolar operation of back-gated thin film field-effect transistors based on hybrid n-type-SiC/p-type-single-walled carbon nanotube networks made with a simple drop casting process. High-performances such an on/off ratio of 10 ⁵, on-conductance of 20 μS, and a subthreshold swing of less than 165 mV/decades were obtained. The devices are air-stable and maintained their ambipolar operation characteristics in ambient atmosphere for more than two months. Finally, these hybrid transistors were utilized to demonstrate advanced logic NOR-gates. This could be a fundamental step toward realizing stable operating nanoelectronic devices.

Original language	English
Article number	043121
Journal	Applied Physics Letters
Volume	101
Issue number	4
DOIs	https://doi.org/10.1063/1.4739939
State	Published - 23 Jul 2012

Bibliographical note

Funding Information:
We acknowledge financial support from the Canada Foundation for Innovation, the Natural Science and Engineering Research Council (NSERC) of Canada, the Fonds Québécois de la Recherche sur la Nature et les Technologies (FQRNT). F.R. is grateful to the Canada Research Chairs Program for partial salary support. B.A. is grateful to NSERC for an industrial post-doctoral fellowship. B.A. is also grateful to Dr. F. Larouche (Raymor Ind.) for supplying the SWNTs.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Ambipolar operation of hybrid SiC-carbon nanotube based thin film transistors for logic circuits applications",

abstract = "We report on the ambipolar operation of back-gated thin film field-effect transistors based on hybrid n-type-SiC/p-type-single-walled carbon nanotube networks made with a simple drop casting process. High-performances such an on/off ratio of 10 5, on-conductance of 20 μS, and a subthreshold swing of less than 165 mV/decades were obtained. The devices are air-stable and maintained their ambipolar operation characteristics in ambient atmosphere for more than two months. Finally, these hybrid transistors were utilized to demonstrate advanced logic NOR-gates. This could be a fundamental step toward realizing stable operating nanoelectronic devices.",

author = "B. A{\"i}ssa and M. Nedil and Esam, {A. H.} and N. Tabet and D. Therriault and F. Rosei",

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AU - Therriault, D.

AU - Rosei, F.

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Ambipolar operation of hybrid SiC-carbon nanotube based thin film transistors for logic circuits applications

Abstract

Bibliographical note

ASJC Scopus subject areas

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