Abstract
Graphene normally behaves as a semimetal because it lacks a bandgap, but when it is patterned into nanoribbons a bandgap can be introduced. By varying the width of these nanoribbons this band gap can be tuned from semiconducting to metallic. This property allows metallic and semiconducting regions within a single Graphene monolayer, which can be used in realising two-dimensional (2D) planar Metal-Insulator-Semiconductor field effect devices. Based on this concept, we present a new class of nano-scale planar devices named Graphene Self-Switching MISFEDs (Metal-Insulator-Semiconductor Field-Effect Diodes), in which Graphene is used as the metal and the semiconductor concurrently. The presented devices exhibit excellent current-voltage characteristics while occupying an ultra-small area with sub-10â€...nm dimensions and an ultimate thinness of a single atom. Quantum mechanical simulation results, based on the Extended Huckel method and Nonequilibrium Green's Function Formalism, show that a Graphene Self-Switching MISFED with a channel as short as 5â€...nm can achieve forward-to-reverse current rectification ratios exceeding 5000.
| Original language | English |
|---|---|
| Article number | 3983 |
| Journal | Scientific Reports |
| Volume | 4 |
| DOIs | |
| State | Published - 5 Feb 2014 |
| Externally published | Yes |
Bibliographical note
Funding Information:Authors would like to thank the NICTA Optics and Nanoelectronics (ONE) group members for your valuable discussions and feedback. F.A. thanks Dana Hirzalla for helping in the production of figures and thanks Christophe Caloz and Woo Young Choi for their valuable discussions and comments. This work was funded by The National ICT Australia – Victorian Research Laboratory (NICTA-VRL), University of Melbourne, Parkville, VIC 3010, Australia.
ASJC Scopus subject areas
- General