All-Graphene Planar Double-Quantum-Dot Resonant Tunneling Diodes

Feras Al-Dirini*, Mahmood A. Mohammed, Faruque M. Hossain, Thas Ampalavanapillai Nirmalathas, Efstratios Skafidas

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

This paper proposes a new class of resonant tunneling diodes (RTDs) that are planar and realizable with a single graphene nanoribbon. Unlike conventional RTDs, which incorporate vertical quantum well regions, the proposed devices incorporate two confined planar quantum dots within the single graphene nanoribbon, giving rise to a pronounced negative differential resistance (NDR) effect. The proposed devices, termed here as planar double-quantum-dot RTDs, and their transport properties are investigated using quantum simulations based on nonequilibrium Green's function formalism and the extended Huckel method. The proposed devices exhibit a unique current-voltage waveform consisting of a single pronounced current peak with an extremely high, in the order of 104, peak-to-valley ratio. The position of the current peak can be tuned between discrete voltage levels, allowing digitized tunability, which is exploited to realize multi-peak NDR devices.

Original languageEnglish
Article number7296584
Pages (from-to)30-39
Number of pages10
JournalIEEE Journal of the Electron Devices Society
Volume4
Issue number1
DOIs
StatePublished - Jan 2016
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2013 IEEE.

Keywords

  • Graphene
  • NDR
  • Negative Differential Resistance
  • Planar
  • Quantum Dot
  • Resonant Tunneling
  • Tunable

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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