All-graphene planar double barrier resonant tunneling diodes

Feras Al-Dirini*, Faruque M. Hossain, Ampalavanapillai Nirmalathas, Efstratios Skafidas

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


In this work, we propose an atomically-thin all-graphene planar double barrier resonant tunneling diode that can be realized within a single graphene nanoribbon. The proposed device does not require any doping or external gating and can be fabricated using minimal process steps. The planar architecture of the device allows a simple in-plane connection of multiple devices in parallel without any extra processing steps during fabrication, enhancing the current driving capabilities of the device. Quantum mechanical simulation results, based on non-equilibrium Green's function formalism and the extended Huckel method, show promising device performance with a high reverse-to-forward current rectification ratio exceeding 50 000, and confirm the presence of negative differential resistance within the device's current-voltage characteristics.

Original languageEnglish
Article number6823085
Pages (from-to)118-122
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Issue number5
StatePublished - 1 Sep 2014
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2014 IEEE.


  • Double barrier
  • NDR
  • NEGF
  • extended Huckel
  • graphene
  • planar diode
  • rectifier
  • resonant tunneling

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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