Abstract
The electron-beam physical vapor deposition (EBPVD) technique was selected for nickel oxide (NiOx) film deposition at room temperatures. NiOx film (18 nm thick) was deposited as a hole transporting material (HTM) for inverted perovskite solar cells (PSCs) onto a fluorine-doped tin oxide (FTO)-coated glass substrate at a chamber vacuum pressure of 4.6104 Pa. PSCs were fabricated as a glass/FTO/NiOx(HTM)/CH3NH3PbI3/PC61BM/BCP/Ag structure with as-deposited and annealed (500 °C for 30 min) NiOx films. Under 100 mW cm2 illumination, as-deposited and annealed NiOx as HTM in PSCs (0.16 cm2) showed a high-power conversion efficiency (PCE) of 13.20% and 13.24%, respectively. The as-deposited and annealed PSCs retained 72.2% and 76.96% of their initial efficiency in ambient conditions, correspondingly. This study highlights the possibility of achieving highly crystalline and finely disseminated NiOx films by EBPVD for fabricating efficient inverted PSCs.
| Original language | English |
|---|---|
| Pages (from-to) | 1801-1816 |
| Number of pages | 16 |
| Journal | Optical Materials Express |
| Volume | 10 |
| Issue number | 10 |
| DOIs | |
| State | Published - 1 Aug 2020 |
Bibliographical note
Publisher Copyright:© 2020 Optical Society of America.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials