A Single Schottky Barrier MOSFET-Based Leaky Integrate and Fire Neuron for Neuromorphic Computing

Faisal Bashir*, Furqan Zahoor*, Ali S. Alzahrani, Abdul Raouf Khan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this brief, a Schottky Barrier MOSFET (SB-MOSFET) based on Impact Ionization mechanism is used to design a leaky integrate and fire (LIF) neuron with considerable enhancement in area, energy and cost is proposed. Using 2D calibrated simulation, we confirmed that SB-MOSFET LIF is able to replicate the neuron behavior precisely without using external circuitry. The proposed LIF neuron shows significantly lower energy per spike of 4 pJ/spike, which is lowest among the single transistor based neurons present in the literature. The recognition precision of 89.2% has been accomplished for Modified National Institute of Standards and Technology (MNIST) image. Besides this, SB-MOSFET doesn't require any doped regions, therefore it can be fabricated with low thermal budget.

Original languageEnglish
Pages (from-to)4018-4022
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume70
Issue number11
DOIs
StatePublished - 1 Nov 2023
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2004-2012 IEEE.

Keywords

  • LIF
  • Leaky integrate and fire
  • SB-MOSFET
  • SNN
  • neuromorphic computing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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