Abstract
In this work, we present a novel Pd/CuOx/ITO memristor based on the interface barrier modulation mechanism. This memristor exhibits the unique coexistence of both volatile (neuronal mode) and non-volatile (synaptic mode) characteristics with low energy consumption, demonstrating long-term potentiation (LTP, 1.08 fJ·μm-2/operation) and long-term depression (LTD, 1.07 fJ·μm-2/operation) synaptic behaviours, as well as leaky integrate-and-fire (LIF) neuronal behaviours (1.56 pJ·μm-2/operation). The device shows great potential for low-energy all-memristor-implemented neuromorphic systems.
| Original language | English |
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| Title of host publication | 2024 IEEE International Conference on IC Design and Technology, ICICDT 2024 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9798331517137 |
| DOIs | |
| State | Published - 2024 |
| Event | 2024 IEEE International Conference on IC Design and Technology, ICICDT 2024 - Singapore, Singapore Duration: 25 Sep 2024 → 27 Sep 2024 |
Publication series
| Name | 2024 IEEE International Conference on IC Design and Technology, ICICDT 2024 |
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Conference
| Conference | 2024 IEEE International Conference on IC Design and Technology, ICICDT 2024 |
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| Country/Territory | Singapore |
| City | Singapore |
| Period | 25/09/24 → 27/09/24 |
Bibliographical note
Publisher Copyright:© 2024 IEEE.
Keywords
- interface barrier modulation
- low-energy consumption
- neuronal and synaptic behaviours
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Instrumentation