Abstract
A novel complementary metal-oxide semiconductor (CMOS) current mirror that can work in weak and strong inversion is proposed. The mirror is capable of accurately copying current in the nano-ampere range. The proposed scheme eliminates the DC matching error caused by the difference between drain-to-source voltages of both the input and output transistors. The proposed circuit was verified using ORCAD simulator in 0.8 m CMOS process technology. Simulation results confirm the functionality and accuracy of the circuit.
| Original language | English |
|---|---|
| Pages (from-to) | 781-786 |
| Number of pages | 6 |
| Journal | International Journal of Electronics |
| Volume | 96 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 2009 |
Keywords
- CMOS circuits
- Current mirror
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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