A New DC Model of HBT's Including Self-Heating Effect Suitable for Circuit Simulators

John Dupuis; Rached Hajji; Fadhel M. Ghannouchi; Khaled Saab; Sylvain Lavallée

doi:10.1109/16.477758

A New DC Model of HBT's Including Self-Heating Effect Suitable for Circuit Simulators

John Dupuis, Rached Hajji, Fadhel M. Ghannouchi, Khaled Saab, Sylvain Lavallée

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

This paper presents a new empirical DC model which includes self-heating effects. The expression of the collector current does not explicitly incorporate the junction temperature of the device to aid convergence process and to simplify the equations involved. A comparison of simulated and experimental DC-IV characteristics over the ohmic and active regions demonstrates the accuracy of the model. This model is suitable for optimization purposes and has been implemented in nonlinear circuit simulators, HSPICE and HP-MDS.

Original language	English
Pages (from-to)	2036-2042
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	42
Issue number	12
DOIs	https://doi.org/10.1109/16.477758
State	Published - Dec 1995

Bibliographical note

Funding Information:
Manuscript received September 2, 1994. The review of this paper was arranged by Associate Editor P. M. Solomon. This work was supported by the Department of Communications and by the National Sciences and Engineering Council of Canada (NSERC).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.477758

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title = "A New DC Model of HBT's Including Self-Heating Effect Suitable for Circuit Simulators",

abstract = "This paper presents a new empirical DC model which includes self-heating effects. The expression of the collector current does not explicitly incorporate the junction temperature of the device to aid convergence process and to simplify the equations involved. A comparison of simulated and experimental DC-IV characteristics over the ohmic and active regions demonstrates the accuracy of the model. This model is suitable for optimization purposes and has been implemented in nonlinear circuit simulators, HSPICE and HP-MDS.",

author = "John Dupuis and Rached Hajji and Ghannouchi, \{Fadhel M.\} and Khaled Saab and Sylvain Lavall{\'e}e",

note = "Funding Information: Manuscript received September 2, 1994. The review of this paper was arranged by Associate Editor P. M. Solomon. This work was supported by the Department of Communications and by the National Sciences and Engineering Council of Canada (NSERC).",

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AU - Saab, Khaled

AU - Lavallée, Sylvain

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AB - This paper presents a new empirical DC model which includes self-heating effects. The expression of the collector current does not explicitly incorporate the junction temperature of the device to aid convergence process and to simplify the equations involved. A comparison of simulated and experimental DC-IV characteristics over the ohmic and active regions demonstrates the accuracy of the model. This model is suitable for optimization purposes and has been implemented in nonlinear circuit simulators, HSPICE and HP-MDS.

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A New DC Model of HBT's Including Self-Heating Effect Suitable for Circuit Simulators

Abstract

Bibliographical note

ASJC Scopus subject areas

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