A gas pressure sensor based on Zro2 thin films for use at high temperatures

M. Aslam Khan; M. A. Gondal; E. E. Khawaja

doi:10.1080/002072100132363

A gas pressure sensor based on Zro₂ thin films for use at high temperatures

M. Aslam Khan^*, M. A. Gondal, E. E. Khawaja

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A gas pressure sensing device based on ZrO₂ thin films for use at high temperatures is presented. The films were deposited on glass substrates through electron beam evaporation of ZrO₂ tablets in vacuum with residual oxygen pressure of the order of 10^-4 mbar. The piezoresistive characteristics of the device for different pressures of N₂, CO₂, Ar and He ar different temperatures were investigated. The experimental results and the underlying physical mechanisms are discussed.

Original language	English
Pages (from-to)	227-234
Number of pages	8
Journal	International Journal of Electronics
Volume	87
Issue number	2
DOIs	https://doi.org/10.1080/002072100132363
State	Published - Feb 2000

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1080/002072100132363

Cite this

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title = "A gas pressure sensor based on Zro2 thin films for use at high temperatures",

abstract = "A gas pressure sensing device based on ZrO2 thin films for use at high temperatures is presented. The films were deposited on glass substrates through electron beam evaporation of ZrO2 tablets in vacuum with residual oxygen pressure of the order of 10-4 mbar. The piezoresistive characteristics of the device for different pressures of N2, CO2, Ar and He ar different temperatures were investigated. The experimental results and the underlying physical mechanisms are discussed.",

author = "Khan, {M. Aslam} and Gondal, {M. A.} and Khawaja, {E. E.}",

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AU - Khawaja, E. E.

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N2 - A gas pressure sensing device based on ZrO2 thin films for use at high temperatures is presented. The films were deposited on glass substrates through electron beam evaporation of ZrO2 tablets in vacuum with residual oxygen pressure of the order of 10-4 mbar. The piezoresistive characteristics of the device for different pressures of N2, CO2, Ar and He ar different temperatures were investigated. The experimental results and the underlying physical mechanisms are discussed.

AB - A gas pressure sensing device based on ZrO2 thin films for use at high temperatures is presented. The films were deposited on glass substrates through electron beam evaporation of ZrO2 tablets in vacuum with residual oxygen pressure of the order of 10-4 mbar. The piezoresistive characteristics of the device for different pressures of N2, CO2, Ar and He ar different temperatures were investigated. The experimental results and the underlying physical mechanisms are discussed.

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