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A dual-RF-plasma approach for controlling the graphitic order and diameters of vertically-aligned multiwall carbon nanotubes

  • Jitendra Menda*
  • , Lakshman Kumar Vanga
  • , Benjamin Ulmen
  • , Yoke Khin Yap
  • , Pan Zhengwei
  • , Ilia N. Ivanov
  • , Alex A. Puretzky
  • , David B. Geohegan
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Plasma enhanced chemical vapor deposition (PECVD) is a unique technique for growing vertically-aligned multiwall carbon nanotubes (VA-MWNTs) at controllable tube densities. This technique is of considerable importance for low temperature growth of VA-MWNTs at desired locations. However, the graphitic order of these MWNTs is inferior to those grown by laser ablation, arc discharge, and thermal CVD techniques. Previously, these VA-MWNTs were grown by a one-plasma approach (DC, microwave etc), either for gas decomposition or substrate biasing. Here, we describe a dual-RF plasma enhanced CVD (dual-RF-PECVD) technique that offers unique capability for controlling the graphitic order and diameters of VA-MWNTs.

Original languageEnglish
Title of host publicationFunctional Carbon Nanotubes
PublisherMaterials Research Society
Pages69-75
Number of pages7
ISBN (Print)1558998101, 9781558998100
DOIs
StatePublished - 2004
Externally publishedYes

Publication series

NameMaterials Research Society Symposium Proceedings
Volume858
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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