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A defect tolerance scheme for nanotechnology circuits

  • Ahmad A. Al-Yamani*
  • , Sundarkumar Ramsundar
  • , Dhiraj K. Pradhan
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

Lithography-based integrated circuit fabrication is rapidly approaching its limit in terms of feature size. The current alternative is nanotechnology-based fabrication, which relies on self-assembly of nanotubes or nanowires. Such a process is subject to a high defect rate, which can be tolerated using carefully crafted defect tolerance techniques. This paper presents an algorithm for reconfiguration-based defect tolerance in nanotechnology switches. The algorithm offers an average switch density improvement of 50% to 100% to most recently published techniques. The algorithm is also consistent in improving the yield through minimizing false rejects as the results show over a large sample. The improvement percentage varies depending on the manufactured switch size and the desired defect-free size with the improvement in efficiency directly proportional to the size of the switch.

Original languageEnglish
Pages (from-to)2402-2409
Number of pages8
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume54
Issue number11 SPEC. ISS.
DOIs
StatePublished - 2007

Bibliographical note

Funding Information:
Manuscript received September 28, 2006; revised July 7, 2007. This work was supported by King Fahd University of Petroleum and Minerals, the University of Bristol, and by EPSRC (U.K). This paper was recommended by Guest Editor C. Lau.

Keywords

  • Cross bar switches
  • Defect tolerance
  • Fault tolerance
  • Nanotechnology
  • Reliability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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