A 5 W high efficiency Class AB power amplifier for LTE base station application

A. S.M. Alqadami; S. Madhuwantha; R. Farrell; J. Dooley

doi:10.1109/ISSC.2017.7983639

A 5 W high efficiency Class AB power amplifier for LTE base station application

A. S.M. Alqadami, S. Madhuwantha, R. Farrell, J. Dooley

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

This paper presents the design of a Class AB power amplifier operating at a frequency band of 3.4 GHz-3.7 GHz for LTE base station applications. The proposed design is targeted for a compact, low cost, high efficiency, and good linearity features. It based on GaN HEMT CGH40006P device manufactured by Wolfspeed/Cree. The design procedure and assessment of the presented power amplifier are described in this paper. The proposed input and output matching networks with stepped tapered microstrip transmission line have enhanced the transmission coefficients of the power amplifier, resulting in improvement of overall performance. The drain voltage and current waveforms are demonstrated to ensure the appropriate biasing point of class AB. At 1dB compression, the simulated results of the proposed class AB power amplifier with one tone input signal delivers power added efficiency of 59%, and 38 dBm output power. With code division multiple access (CDMA) signal, the power amplifier delivers a 51.9% of PAE, adjacent channel power ratio (ACPR) of below than-28.5 dBc at 2.25 MHz offsets, and delivers 37 dBm (∼5 W) output power.

Original language	English
Title of host publication	2017 28th Irish Signals and Systems Conference, ISSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538610466
DOIs	https://doi.org/10.1109/ISSC.2017.7983639
State	Published - 18 Jul 2017
Externally published	Yes
Event	28th Irish Signals and Systems Conference, ISSC 2017 - Killarney, Ireland Duration: 20 Jun 2017 → 21 Jun 2017

Publication series

Name	2017 28th Irish Signals and Systems Conference, ISSC 2017

Conference

Conference	28th Irish Signals and Systems Conference, ISSC 2017
Country/Territory	Ireland
City	Killarney
Period	20/06/17 → 21/06/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

Keywords

Class AB
GaN-Based
High efficiency
Power amplifier

ASJC Scopus subject areas

Computer Networks and Communications
Signal Processing

Access to Document

10.1109/ISSC.2017.7983639

Cite this

Alqadami, A. S. M., Madhuwantha, S., Farrell, R., & Dooley, J. (2017). A 5 W high efficiency Class AB power amplifier for LTE base station application. In 2017 28th Irish Signals and Systems Conference, ISSC 2017 Article 7983639 (2017 28th Irish Signals and Systems Conference, ISSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSC.2017.7983639

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title = "A 5 W high efficiency Class AB power amplifier for LTE base station application",

abstract = "This paper presents the design of a Class AB power amplifier operating at a frequency band of 3.4 GHz-3.7 GHz for LTE base station applications. The proposed design is targeted for a compact, low cost, high efficiency, and good linearity features. It based on GaN HEMT CGH40006P device manufactured by Wolfspeed/Cree. The design procedure and assessment of the presented power amplifier are described in this paper. The proposed input and output matching networks with stepped tapered microstrip transmission line have enhanced the transmission coefficients of the power amplifier, resulting in improvement of overall performance. The drain voltage and current waveforms are demonstrated to ensure the appropriate biasing point of class AB. At 1dB compression, the simulated results of the proposed class AB power amplifier with one tone input signal delivers power added efficiency of 59%, and 38 dBm output power. With code division multiple access (CDMA) signal, the power amplifier delivers a 51.9% of PAE, adjacent channel power ratio (ACPR) of below than-28.5 dBc at 2.25 MHz offsets, and delivers 37 dBm (∼5 W) output power.",

keywords = "Class AB, GaN-Based, High efficiency, Power amplifier",

author = "Alqadami, {A. S.M.} and S. Madhuwantha and R. Farrell and J. Dooley",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 28th Irish Signals and Systems Conference, ISSC 2017 ; Conference date: 20-06-2017 Through 21-06-2017",

year = "2017",

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doi = "10.1109/ISSC.2017.7983639",

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Alqadami, ASM, Madhuwantha, S, Farrell, R & Dooley, J 2017, A 5 W high efficiency Class AB power amplifier for LTE base station application. in 2017 28th Irish Signals and Systems Conference, ISSC 2017., 7983639, 2017 28th Irish Signals and Systems Conference, ISSC 2017, Institute of Electrical and Electronics Engineers Inc., 28th Irish Signals and Systems Conference, ISSC 2017, Killarney, Ireland, 20/06/17. https://doi.org/10.1109/ISSC.2017.7983639

A 5 W high efficiency Class AB power amplifier for LTE base station application. / Alqadami, A. S.M.; Madhuwantha, S.; Farrell, R. et al.
2017 28th Irish Signals and Systems Conference, ISSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7983639 (2017 28th Irish Signals and Systems Conference, ISSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Dooley, J.

PY - 2017/7/18

Y1 - 2017/7/18

N2 - This paper presents the design of a Class AB power amplifier operating at a frequency band of 3.4 GHz-3.7 GHz for LTE base station applications. The proposed design is targeted for a compact, low cost, high efficiency, and good linearity features. It based on GaN HEMT CGH40006P device manufactured by Wolfspeed/Cree. The design procedure and assessment of the presented power amplifier are described in this paper. The proposed input and output matching networks with stepped tapered microstrip transmission line have enhanced the transmission coefficients of the power amplifier, resulting in improvement of overall performance. The drain voltage and current waveforms are demonstrated to ensure the appropriate biasing point of class AB. At 1dB compression, the simulated results of the proposed class AB power amplifier with one tone input signal delivers power added efficiency of 59%, and 38 dBm output power. With code division multiple access (CDMA) signal, the power amplifier delivers a 51.9% of PAE, adjacent channel power ratio (ACPR) of below than-28.5 dBc at 2.25 MHz offsets, and delivers 37 dBm (∼5 W) output power.

AB - This paper presents the design of a Class AB power amplifier operating at a frequency band of 3.4 GHz-3.7 GHz for LTE base station applications. The proposed design is targeted for a compact, low cost, high efficiency, and good linearity features. It based on GaN HEMT CGH40006P device manufactured by Wolfspeed/Cree. The design procedure and assessment of the presented power amplifier are described in this paper. The proposed input and output matching networks with stepped tapered microstrip transmission line have enhanced the transmission coefficients of the power amplifier, resulting in improvement of overall performance. The drain voltage and current waveforms are demonstrated to ensure the appropriate biasing point of class AB. At 1dB compression, the simulated results of the proposed class AB power amplifier with one tone input signal delivers power added efficiency of 59%, and 38 dBm output power. With code division multiple access (CDMA) signal, the power amplifier delivers a 51.9% of PAE, adjacent channel power ratio (ACPR) of below than-28.5 dBc at 2.25 MHz offsets, and delivers 37 dBm (∼5 W) output power.

KW - Class AB

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BT - 2017 28th Irish Signals and Systems Conference, ISSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 28th Irish Signals and Systems Conference, ISSC 2017

Y2 - 20 June 2017 through 21 June 2017

ER -

A 5 W high efficiency Class AB power amplifier for LTE base station application

Abstract

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Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

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