A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna

Cameroon Hill; Cooper S. Levy; Hussam Alshammary; Ahmed Hamza; James F. Buckwalter

doi:10.1109/MWSYM.2018.8439578

A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna

Cameroon Hill
, Cooper S. Levy
, Hussam Alshammary
, Ahmed Hamza
, James F. Buckwalter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

This paper reports a Watt-level power handling modulator using a stacked-FET switch for signal processing at the antenna. Two design approaches are compared in this paper: a resistive gate termination and an inductive gate termination. The stacked switches are implemented in 45-nm CMOS SOI. Measured performance of these stacked switches shows the benefit of an inductive termination: power handling capabilities of > 30dBm with modulation speeds of up to 300 MHz. The IIP3 is demonstrated to exceed 45 dBm.

Original language	English
Title of host publication	Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	423-426
Number of pages	4
ISBN (Print)	9781538650677
DOIs	https://doi.org/10.1109/MWSYM.2018.8439578
State	Published - 17 Aug 2018

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2018-June
ISSN (Print)	0149-645X

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

RF switches
SOI CMOS
spread-spectrum
watt-level

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2018.8439578

Cite this

Hill, C., Levy, C. S., Alshammary, H., Hamza, A., & Buckwalter, J. F. (2018). A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna. In Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 (pp. 423-426). Article 8439578 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2018-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2018.8439578

Hill, Cameroon ; Levy, Cooper S. ; Alshammary, Hussam et al. / A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna. Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 423-426 (IEEE MTT-S International Microwave Symposium Digest).

@inproceedings{351e0b44bb0f4d97b51e5169c1c9f3de,

title = "A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna",

abstract = "This paper reports a Watt-level power handling modulator using a stacked-FET switch for signal processing at the antenna. Two design approaches are compared in this paper: a resistive gate termination and an inductive gate termination. The stacked switches are implemented in 45-nm CMOS SOI. Measured performance of these stacked switches shows the benefit of an inductive termination: power handling capabilities of > 30dBm with modulation speeds of up to 300 MHz. The IIP3 is demonstrated to exceed 45 dBm.",

keywords = "RF switches, SOI CMOS, spread-spectrum, watt-level",

author = "Cameroon Hill and Levy, \{Cooper S.\} and Hussam Alshammary and Ahmed Hamza and Buckwalter, \{James F.\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2018",

month = aug,

day = "17",

doi = "10.1109/MWSYM.2018.8439578",

language = "English",

isbn = "9781538650677",

series = "IEEE MTT-S International Microwave Symposium Digest",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "423--426",

booktitle = "Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018",

address = "United States",

}

Hill, C, Levy, CS, Alshammary, H, Hamza, A & Buckwalter, JF 2018, A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna. in Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018., 8439578, IEEE MTT-S International Microwave Symposium Digest, vol. 2018-June, Institute of Electrical and Electronics Engineers Inc., pp. 423-426. https://doi.org/10.1109/MWSYM.2018.8439578

A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna. / Hill, Cameroon; Levy, Cooper S.; Alshammary, Hussam et al.
Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 423-426 8439578 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna

AU - Hill, Cameroon

AU - Levy, Cooper S.

AU - Alshammary, Hussam

AU - Hamza, Ahmed

AU - Buckwalter, James F.

PY - 2018/8/17

Y1 - 2018/8/17

N2 - This paper reports a Watt-level power handling modulator using a stacked-FET switch for signal processing at the antenna. Two design approaches are compared in this paper: a resistive gate termination and an inductive gate termination. The stacked switches are implemented in 45-nm CMOS SOI. Measured performance of these stacked switches shows the benefit of an inductive termination: power handling capabilities of > 30dBm with modulation speeds of up to 300 MHz. The IIP3 is demonstrated to exceed 45 dBm.

AB - This paper reports a Watt-level power handling modulator using a stacked-FET switch for signal processing at the antenna. Two design approaches are compared in this paper: a resistive gate termination and an inductive gate termination. The stacked switches are implemented in 45-nm CMOS SOI. Measured performance of these stacked switches shows the benefit of an inductive termination: power handling capabilities of > 30dBm with modulation speeds of up to 300 MHz. The IIP3 is demonstrated to exceed 45 dBm.

KW - RF switches

KW - SOI CMOS

KW - spread-spectrum

KW - watt-level

UR - https://www.scopus.com/pages/publications/85053047883

U2 - 10.1109/MWSYM.2018.8439578

DO - 10.1109/MWSYM.2018.8439578

M3 - Conference contribution

AN - SCOPUS:85053047883

SN - 9781538650677

T3 - IEEE MTT-S International Microwave Symposium Digest

SP - 423

EP - 426

BT - Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Hill C, Levy CS, Alshammary H, Hamza A, Buckwalter JF. A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna. In Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 423-426. 8439578. (IEEE MTT-S International Microwave Symposium Digest). doi: 10.1109/MWSYM.2018.8439578

A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna

Abstract

Publication series

Bibliographical note

Keywords

ASJC Scopus subject areas

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