A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna

Cameroon Hill; Cooper S. Levy; Hussam Alshammary; Ahmed Hamza; James F. Buckwalter

doi:10.1109/MWSYM.2018.8439578

A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna

Cameroon Hill, Cooper S. Levy, Hussam Alshammary, Ahmed Hamza, James F. Buckwalter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

This paper reports a Watt-level power handling modulator using a stacked-FET switch for signal processing at the antenna. Two design approaches are compared in this paper: a resistive gate termination and an inductive gate termination. The stacked switches are implemented in 45-nm CMOS SOI. Measured performance of these stacked switches shows the benefit of an inductive termination: power handling capabilities of > 30dBm with modulation speeds of up to 300 MHz. The IIP3 is demonstrated to exceed 45 dBm.

Original language	English
Title of host publication	Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	423-426
Number of pages	4
ISBN (Print)	9781538650677
DOIs	https://doi.org/10.1109/MWSYM.2018.8439578
State	Published - 17 Aug 2018

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2018-June
ISSN (Print)	0149-645X

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

RF switches
SOI CMOS
spread-spectrum
watt-level

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2018.8439578

Cite this

Hill, C., Levy, C. S., Alshammary, H., Hamza, A., & Buckwalter, J. F. (2018). A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna. In Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018 (pp. 423-426). Article 8439578 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2018-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2018.8439578

Hill, Cameroon ; Levy, Cooper S. ; Alshammary, Hussam et al. / A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna. Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 423-426 (IEEE MTT-S International Microwave Symposium Digest).

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title = "A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna",

abstract = "This paper reports a Watt-level power handling modulator using a stacked-FET switch for signal processing at the antenna. Two design approaches are compared in this paper: a resistive gate termination and an inductive gate termination. The stacked switches are implemented in 45-nm CMOS SOI. Measured performance of these stacked switches shows the benefit of an inductive termination: power handling capabilities of > 30dBm with modulation speeds of up to 300 MHz. The IIP3 is demonstrated to exceed 45 dBm.",

keywords = "RF switches, SOI CMOS, spread-spectrum, watt-level",

author = "Cameroon Hill and Levy, {Cooper S.} and Hussam Alshammary and Ahmed Hamza and Buckwalter, {James F.}",

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Hill, C, Levy, CS, Alshammary, H, Hamza, A & Buckwalter, JF 2018, A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna. in Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018., 8439578, IEEE MTT-S International Microwave Symposium Digest, vol. 2018-June, Institute of Electrical and Electronics Engineers Inc., pp. 423-426. https://doi.org/10.1109/MWSYM.2018.8439578

A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna. / Hill, Cameroon; Levy, Cooper S.; Alshammary, Hussam et al.
Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 423-426 8439578 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Hill C, Levy CS, Alshammary H, Hamza A, Buckwalter JF. A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna. In Proceedings of the 2018 IEEE/MTT-S International Microwave Symposium, IMS 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 423-426. 8439578. (IEEE MTT-S International Microwave Symposium Digest). doi: 10.1109/MWSYM.2018.8439578

A 30.9 dBm, 300 MHz 45-nm SOI CMOS Power Modulator for Spread-Spectrum Signal Processing at the Antenna

Abstract

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Keywords

ASJC Scopus subject areas

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