A 1.5-dB Insertion Loss, 34-dBm P1dB Power Modulator with 46% Fractional Bandwidth in 45-nm CMOS SOI

Cameron Hill; Ahmed Hamza; Hussam Alshammary; James F. Buckwalter

doi:10.1109/mwsym.2019.8700810

A 1.5-dB Insertion Loss, 34-dBm P_1dB Power Modulator with 46% Fractional Bandwidth in 45-nm CMOS SOI

Cameron Hill
, Ahmed Hamza
, Hussam Alshammary
, James F. Buckwalter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

This work reports a high-power modulator implemented in 45-nm CMOS SOI for signal processing after the power amplifier. Two stacked switch variations, a 12 stack and 8 stack, were designed in 45-nm SOI CMOS and tested for trade-offs in insertion loss and power handling. These switches use a novel tapering technique to significantly improve switch linearity. The modulators have P_1dB values between 34 dBm and 39 dBm while demonstrating a modulation bandwidth of nearly 500 MHz with a 1 GHz carrier. The IIP3 is between 46 dBm and 61 dBm.

Original language	English
Title of host publication	2019 IEEE MTT-S International Microwave Symposium, IMS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	243-246
Number of pages	4
ISBN (Electronic)	9781728113098
DOIs	https://doi.org/10.1109/mwsym.2019.8700810
State	Published - Jun 2019

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2019-June
ISSN (Print)	0149-645X

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

Keywords

High Power
Phase-shifter
RF Switch
SOI CMOS

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/mwsym.2019.8700810

Cite this

Hill, C., Hamza, A., Alshammary, H., & Buckwalter, J. F. (2019). A 1.5-dB Insertion Loss, 34-dBm P_1dB Power Modulator with 46% Fractional Bandwidth in 45-nm CMOS SOI. In 2019 IEEE MTT-S International Microwave Symposium, IMS 2019 (pp. 243-246). Article 8700810 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/mwsym.2019.8700810

@inproceedings{f17692a3ddbf45b7a1fbe73698a4a370,

title = "A 1.5-dB Insertion Loss, 34-dBm P1dB Power Modulator with 46\% Fractional Bandwidth in 45-nm CMOS SOI",

abstract = "This work reports a high-power modulator implemented in 45-nm CMOS SOI for signal processing after the power amplifier. Two stacked switch variations, a 12 stack and 8 stack, were designed in 45-nm SOI CMOS and tested for trade-offs in insertion loss and power handling. These switches use a novel tapering technique to significantly improve switch linearity. The modulators have P1dB values between 34 dBm and 39 dBm while demonstrating a modulation bandwidth of nearly 500 MHz with a 1 GHz carrier. The IIP3 is between 46 dBm and 61 dBm.",

keywords = "High Power, Phase-shifter, RF Switch, SOI CMOS",

author = "Cameron Hill and Ahmed Hamza and Hussam Alshammary and Buckwalter, \{James F.\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.",

year = "2019",

month = jun,

doi = "10.1109/mwsym.2019.8700810",

language = "English",

series = "IEEE MTT-S International Microwave Symposium Digest",

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Hill, C, Hamza, A, Alshammary, H & Buckwalter, JF 2019, A 1.5-dB Insertion Loss, 34-dBm P_1dB Power Modulator with 46% Fractional Bandwidth in 45-nm CMOS SOI. in 2019 IEEE MTT-S International Microwave Symposium, IMS 2019., 8700810, IEEE MTT-S International Microwave Symposium Digest, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. 243-246. https://doi.org/10.1109/mwsym.2019.8700810

A 1.5-dB Insertion Loss, 34-dBm P_1dB Power Modulator with 46% Fractional Bandwidth in 45-nm CMOS SOI. / Hill, Cameron; Hamza, Ahmed; Alshammary, Hussam et al.
2019 IEEE MTT-S International Microwave Symposium, IMS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 243-246 8700810 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - This work reports a high-power modulator implemented in 45-nm CMOS SOI for signal processing after the power amplifier. Two stacked switch variations, a 12 stack and 8 stack, were designed in 45-nm SOI CMOS and tested for trade-offs in insertion loss and power handling. These switches use a novel tapering technique to significantly improve switch linearity. The modulators have P1dB values between 34 dBm and 39 dBm while demonstrating a modulation bandwidth of nearly 500 MHz with a 1 GHz carrier. The IIP3 is between 46 dBm and 61 dBm.

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Hill C, Hamza A, Alshammary H, Buckwalter JF. A 1.5-dB Insertion Loss, 34-dBm P_1dB Power Modulator with 46% Fractional Bandwidth in 45-nm CMOS SOI. In 2019 IEEE MTT-S International Microwave Symposium, IMS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 243-246. 8700810. (IEEE MTT-S International Microwave Symposium Digest). doi: 10.1109/mwsym.2019.8700810