11 Level boost inverter topology with dual-source configuration

Marif Daula Siddique; Mohammad Wasiq; Atif Iqbal; Saad Mekhilef; Addy Wahyudie; Muhyaddin Rawa

doi:10.1049/pel2.12317

11 Level boost inverter topology with dual-source configuration

Marif Daula Siddique
, Mohammad Wasiq
, Atif Iqbal
, Saad Mekhilef^*
, Addy Wahyudie
, Muhyaddin Rawa

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

With the advancement of the application of power converters in the power industry, the research towards the prominent power converter namely multilevel inverter has gained a lot of attraction. Here, a dual-source configured 11 level inverter topology is being discussed, which uses nine power semiconductor devices and one capacitor. The proposed topology is able to charge the capacitor up to 2V_dc which provides the boosting feature with the voltage gain of 1.67. An extended comparison with several other topologies has been provided which highlights the major contribution of the work. A low-power laboratory prototype has been used for the validation of the proposed 11 level topology. Further, a thorough assessment of comparable topologies has been conferred in detail.

Original language	English
Pages (from-to)	1696-1702
Number of pages	7
Journal	IET Power Electronics
Volume	16
Issue number	10
DOIs	https://doi.org/10.1049/pel2.12317
State	Published - 5 Aug 2023

Bibliographical note

Publisher Copyright:
© 2022 The Authors. IET Power Electronics published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology.

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/pel2.12317

Cite this

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title = "11 Level boost inverter topology with dual-source configuration",

abstract = "With the advancement of the application of power converters in the power industry, the research towards the prominent power converter namely multilevel inverter has gained a lot of attraction. Here, a dual-source configured 11 level inverter topology is being discussed, which uses nine power semiconductor devices and one capacitor. The proposed topology is able to charge the capacitor up to 2Vdc which provides the boosting feature with the voltage gain of 1.67. An extended comparison with several other topologies has been provided which highlights the major contribution of the work. A low-power laboratory prototype has been used for the validation of the proposed 11 level topology. Further, a thorough assessment of comparable topologies has been conferred in detail.",

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AU - Siddique, Marif Daula

AU - Wasiq, Mohammad

AU - Iqbal, Atif

AU - Mekhilef, Saad

AU - Wahyudie, Addy

AU - Rawa, Muhyaddin

PY - 2023/8/5

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AB - With the advancement of the application of power converters in the power industry, the research towards the prominent power converter namely multilevel inverter has gained a lot of attraction. Here, a dual-source configured 11 level inverter topology is being discussed, which uses nine power semiconductor devices and one capacitor. The proposed topology is able to charge the capacitor up to 2Vdc which provides the boosting feature with the voltage gain of 1.67. An extended comparison with several other topologies has been provided which highlights the major contribution of the work. A low-power laboratory prototype has been used for the validation of the proposed 11 level topology. Further, a thorough assessment of comparable topologies has been conferred in detail.

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ER -

11 Level boost inverter topology with dual-source configuration

Abstract

Bibliographical note

ASJC Scopus subject areas

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