β-detected NMR Study of Semi-Insulating GaAs

Q. Song, K. H. Chow, M. D. Hossain, R. F. Kiefl, G. D. Morris, C. D.P. Levy, H. Saadaoui, M. Smadella, D. Wang, B. Kardasz, B. Heinrich, W. A. Macfarlane

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

A beta-detected NMR experiment is carried out on a semi-insulating GaAs crystal using a low energy spin polarized 8Li+ beam to investigate the magnetic properties as a function of temperature and depth. The range of depths probed, from ∼137 nm down to ∼17 nm, coincides with the region of electronic band-bending due to the surface. We find a resonance broadened by the host nuclear dipoles, consistent with an earlier report[6], but using a pulsed radio frequency scheme, we are able to make higher resolution measurements. We find a small negative shift of the resonance (relative to an MgO reference) at room temperature that is independent of depth. Remarkably, as the temperature is reduced below about 150 K, the resonance shifts negatively and becomes depth dependent, with a larger negative shift deeper into the sample. This shift saturates below 10 K, i.e. it does not follow a Curie's law that might be expected for dilute magnetic impurities. Possible origins are discussed.

Original languageEnglish
Pages (from-to)227-230
Number of pages4
JournalPhysics Procedia
Volume30
DOIs
StatePublished - 2012
Externally publishedYes
Event12th International Conference on Muon Spin Rotation, Relaxation and Resonance, muSR 2011 - Cancun, Mexico
Duration: 16 May 201120 May 2011

Bibliographical note

Publisher Copyright:
© 2012 Published by Elsevier B.V.

Keywords

  • depth-controlled β-nmr
  • semiconductor
  • surface effects
  • thin films

ASJC Scopus subject areas

  • General Physics and Astronomy

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