Abstract
To test for the microscopic magnetic phase separation in the dilute magnetic semiconductor Ga1-xMnxAs sug-gested by low energy muon spin rotation measurements[1], we present a detailed analysis of the amplitudes of the 8Li β-detected nuclear magnetic resonance in an epitaxially grown thin film of x = 5.4% Mn doped GaAs on a semi-insulating GaAs substrate with magnetic transition temperature TC =72 K. The spectrum at 100 K corresponds to 73% of the full room temperature amplitude, and at 60 K to about 62%. The 11% loss of signal through the magnetic tran-sition is much smaller than that ∼ 50% found by low energy μSR[1], and may be entirely due to an amplitude change intrinsic to GaAs. This lack of evidence for phase separation is, however, consistent with the full volume fraction magnetism found by a second low energy μSR measurement on a different sample using weak transverse field[2].
| Original language | English |
|---|---|
| Pages (from-to) | 174-177 |
| Number of pages | 4 |
| Journal | Physics Procedia |
| Volume | 30 |
| DOIs | |
| State | Published - 2012 |
| Externally published | Yes |
| Event | 12th International Conference on Muon Spin Rotation, Relaxation and Resonance, muSR 2011 - Cancun, Mexico Duration: 16 May 2011 → 20 May 2011 |
Bibliographical note
Publisher Copyright:© 2012 Published by Elsevier B.V.
Keywords
- GaAs:Mn
- dilute magnetic semiconductors
- low energy muons
- thin films
ASJC Scopus subject areas
- General Physics and Astronomy