In this proposed project, we will develop a novel two-terminal oxide-based optoelectronic memory device, which enables to integrate multiple functions including sensing, memor...ry and computing. It is significant to systemically study the physical mechanisms behind to further improve the switching performances for various applications considering from the device physics. We aim to study the low-temperature optical switching characteristics to qualitatively and quantitatively determine the physical model of optical memory switching.
|Effective start/end date||7/02/23 → 7/02/23|
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