New Photodiodes based Graphene-Organic Semiconductors Hybrid Materials

In proposed project study, the graphene-organic semiconductors films such as graphene:pentacene derivates, graphene:polyaniline, PCBM films will be prepared by spin coating or dip coating methods. New photodiodes based on metal/semiconductor and heterostructures will be prepared by the hybrid semiconductor materials using conventional semiconductor substrates such as Si and GaAs. The current-voltage and capacitance-conductance-voltage measurements will be used for the electrical characterization of the photodiodes. The rectifying and photoresponse properties of the diodes will be improved by changing the chemical composition and molar ratios of graphene:organic semiconductor. We plan to focus on the photoresponse performance of hybrid semiconductor materials based diodes. Our objective is to answer the following questions: 1) How hybrid semiconductor materials control the rectifying and photoresponse properties of the photodiodes and how the behavior of the diodes differs from the ideal situation? 2) How the positions of hybrid semiconductor materials as well as their alignments, affect device operation and performance? 3) Whether hybrid semiconductor materials based Schottky diodes are suitable for electronic and optoelectronic applications?