Micro/Nano Scale Energy Transport in Thin Films with Various Shapes

Thermal energy transfer in thin silicon films of various thicknesses will be examined in relation to micro/nano-scale heat transfer across small-size devices. This study considers the simulation and experimentation of transport characteristics as the thin film is disturbed thermally by a temperature differential. Phonon radiative transport, as described by the Boltzmann Transport Equation, is to be used in formulating the phonon transfer across the film. The influence of the film thickness on the transport characteristics will be examined and the resulting thermal conductivity is assessed for the possible applications of thermal transfer in the small-scale electronic devices. Since the definition of thermodynamic temperature loses its meaning for ultra-thin films, equivalent equilibrium temperature will be introduced to quantify the phonon intensity distribution in the film. Sets of experiments will be carried out to validate the predictions of thermal conductivity from the model study. The study will be extended to include influence of vacuum gap, in between the film edges, on the transport characteristics. In addition, the thermal conductivity data obtained in the present study will be compared with those reported in the literature.