Fabrication and electro-optical characterization of Tin Oxide thin films for their possible applications in UV based devices

Project: Research

Project Details


This proposal is concerned with the optical transitions associated with stoichiometric and non-stoichiometric SnO2 thin films for their possible applications in different optoelectronics fields. SnO2 in thin film form possesses low efficiency of emission at room temperature. So, the direct observation of the optical transitions in SnO2 thins films at room temperature is a challenging task. Moreover, the UV transitions in SnO2 films cannot be observed by ordinary experimental means. In this work, SnO2 thin films will be fabricated by electron beam evaporation and RF sputtering method. Their optical properties, chemical composition, and electrical characterization will be investigated through Spectrophotometry, X-ray Photoelectron Spectroscopy, and standard Electrometer. In order to obtain direct observation of the optical transitions involved in SnO2 thin films, an external electric field will be used as a source of perturbation. For that purpose, a capacitor type geometry will be synthesized in which SnO2 film will be sandwiched as a dielectric layer between the two metal field electrodes. This metal oxide metal geometry will be illuminated by electromagnetic radiation from UV to visible range in the presence of the electric field. This will result a sharp derivative like feature of the optical transitions with a featureless background. The successful completion of this work will explore the possible role of optical transitions involved in SnO2 thin films in UV lasers devices and other optoelectronics applications.
Effective start/end date1/09/2031/01/22


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