Band Structure and Tunneling Effect of Fermions in Strained Graphene

We plan to investigate the basic features of graphene systems under strain effect as well as external stimuli such as magnetic field. In the first stage of this project we study the influence of strain effect on the electronic band structure of graphene systems. Besides charge transport, we also propose to study spin transport through a strained graphene system. This is important in possible realization of Datta-Das spin field effect transistor (sFET) that relies on Bychkov-Rashba spin splitting that could occur in asymmetric quantum wells or in deformed bulk systems.